DocumentCode :
2263181
Title :
Multi-wavelength infrared detection realized with two distinct superlattices, separated by a blocking barrier
Author :
Chen, C.C. ; Chen, H.C. ; Hsieh, W.H. ; Kuan, C.H. ; Lin, S.D. ; Lee, C.P.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2002
fDate :
24-24 May 2002
Abstract :
Summary form only given. A detector with two distinct superlattices separated by a blocking barrier was investigated for multi-wavelength infrared detection. We show the band structure of our detector. It contains sequentially a 500 nm bottom contact layer, a 14-period bottom superlattice, a blocking barrier, another 14-period top superlattice, and a 400 nm top contact layer. Each period of the bottom and top superlattices is respectively composed of 6 nm GaAs well and 4 nm Al/sub 0.27/Ga/sub 0.73/As barrier.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor quantum wells; semiconductor superlattices; 14-period bottom superlattice; 14-period top superlattice; Al/sub 0.27/Ga/sub 0.73/As; Al/sub 0.27/Ga/sub 0.73/As barrier; GaAs; GaAs well; blocking barrier; bottom contact layer; multi-wavelength infrared detection; superlattices; top contact layer; Gallium arsenide; Infrared detectors; Optical fiber cables; Optical fiber communication; Oxidation; Photodetectors; Substrates; Superlattices; Voltage; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
Type :
conf
DOI :
10.1109/CLEO.2002.1033530
Filename :
1033530
Link To Document :
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