Large-signal response of high speed p-i-n photodetectors to short pulses with small spot sizes

Author

Demir, H.V. ; Yairi, M.B. ; Atanackovic, P. ; Miller, D.B.

Author_Institution

Stanford Univ., CA, USA

fYear

2002

fDate

24-24 May 2002

Abstract

Summary form only given. We simulated the behavior of a feasible photodetector: a 25 x 25 /spl mu/m p-i-n diode. To determine the spatio-temporal behavior, we monitored the voltage change across the photodiode in response to the incident pulse. For that, we used a dual-diode structure that was comprised of a p-i-n photodiode with a bulk intrinsic region integrated with a p-i(MQW)-n reflective electrooptical modulator diode on the bottom.

Keywords

electro-optical modulation; high-speed optical techniques; p-i-n photodiodes; photodetectors; quantum well devices; reflectivity; semiconductor quantum wells; 25 micron; high speed p-i-n photodetectors; large-signal response; p-i(MQW)-n reflective electrooptical modulator diode; p-i-n diode; p-i-n photodiode; short pulses; small spot sizes; spatio-temporal behavior; voltage change monitoring; Bleaching; Detectors; High speed optical techniques; Optical modulation; Optical pulses; P-i-n diodes; PIN photodiodes; Photodetectors; Pulse measurements; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033533

Filename

1033533