• DocumentCode
    2263331
  • Title

    Fast simulation framework for subthreshold circuits

  • Author

    Henry, Michael B. ; Griffin, Steven B. ; Nazhandali, Leyla

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Virginia Tech, Blacksburg, VA, USA
  • fYear
    2009
  • fDate
    24-27 May 2009
  • Firstpage
    2549
  • Lastpage
    2552
  • Abstract
    Subthreshold voltage operation, which can be considered an extreme case of voltage scaling, can greatly reduce the power consumption of circuits. This is beneficial in embedded applications that must run off of batteries and scavenged energy. Subthreshold operation has been proven to be very effective by several successful prototypes in the recent years, yet there is no fast and effective way for designers to estimate power and delay of a design operating in the subthreshold region. Traditional gate-level simulation tools are not set up to perform timing and power analysis in the subthreshold region and transistor level simulations are very time consuming due to the accuracy required to measure the very low levels of current. This paper presents a simulation framework that can accurately characterize a circuit from nominal voltage, all the way down into the subthreshold region. This framework uses the nominal frequency and power of a target circuit and a normalized ring oscillator curve to characterize the circuit at lower voltages. The contribution of this paper is a detailed analysis of this framework in the presence of a variety of design parameters such as bus lengths, transistor widths, etc. The simulation framework is extremely quick and accurate across a wide variety of circuits.
  • Keywords
    electric potential; oscillators; power semiconductor devices; transistors; embedded applications; gate-level simulation tools; normalized ring oscillator curve; subthreshold circuits; subthreshold voltage operation; transistor level simulations; voltage scaling; Analytical models; Batteries; Circuit simulation; Delay effects; Delay estimation; Energy consumption; Performance evaluation; Prototypes; Timing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-3827-3
  • Electronic_ISBN
    978-1-4244-3828-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2009.5118321
  • Filename
    5118321