Flip-chip optical transceivers, monolithic pin receivers and quadratic-phase voltage-controlled oscillators in ultra-thin silicon-on-sapphire

Summary form only given. The ultra-thin silicon-on-sapphire process uses 100 nm silicon on top of fully insulating, optically transparent synthetic sapphire. The process has good thermal conductivity properties and thermal expansion coefficients well-matched to flip-chip-bonded GaAs optical devices. It is one example of a silicon-on-sapphire CMOS process with great potential for photonic integration. We present the design, simulation, fabrication and test of UTSi chips containing several test circuits and subsystems useful for optical communications and interconnections.