Title :
Detectors of γ-Quantum based on epitaxial GaAs:S, Cr layers
Author :
Vilisova, M.D. ; Germogenov, V.P. ; Ponomarev, I.V. ; Tyazhev, A.V.
Author_Institution :
Tomsk State Univ., Tomsk, Russia
Abstract :
The results of study detector structures based on epitaxial layers of GaAs, compensated by Cr, are presented. It is shown that distribution of electric field straight in active region of the structures affected on it amplitude spectrums of γ-quantum.
Keywords :
chromium; gallium arsenide; gamma-ray detection; semiconductor counters; semiconductor epitaxial layers; sulphur; GaAs:S,Cr; electric field; gamma-quantum based detector; semiconductor epitaxial layers; Charge carrier processes; Detectors; Electric fields; Epitaxial growth; Gallium arsenide; Photonics; Thyristors; γ-quantum; GaAs; P-i-n-diod; detector;
Conference_Titel :
Control and Communications (SIBCON), 2011 International Siberian Conference on
Conference_Location :
Krasnoyarsk
Print_ISBN :
978-1-4577-1069-8
DOI :
10.1109/SIBCON.2011.6072646
