DocumentCode :
2264044
Title :
Detectors of γ-Quantum based on epitaxial GaAs:S, Cr layers
Author :
Vilisova, M.D. ; Germogenov, V.P. ; Ponomarev, I.V. ; Tyazhev, A.V.
Author_Institution :
Tomsk State Univ., Tomsk, Russia
fYear :
2011
fDate :
15-16 Sept. 2011
Firstpage :
249
Lastpage :
251
Abstract :
The results of study detector structures based on epitaxial layers of GaAs, compensated by Cr, are presented. It is shown that distribution of electric field straight in active region of the structures affected on it amplitude spectrums of γ-quantum.
Keywords :
chromium; gallium arsenide; gamma-ray detection; semiconductor counters; semiconductor epitaxial layers; sulphur; GaAs:S,Cr; electric field; gamma-quantum based detector; semiconductor epitaxial layers; Charge carrier processes; Detectors; Electric fields; Epitaxial growth; Gallium arsenide; Photonics; Thyristors; γ-quantum; GaAs; P-i-n-diod; detector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control and Communications (SIBCON), 2011 International Siberian Conference on
Conference_Location :
Krasnoyarsk
Print_ISBN :
978-1-4577-1069-8
Type :
conf
DOI :
10.1109/SIBCON.2011.6072646
Filename :
6072646
Link To Document :
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