• DocumentCode
    2264044
  • Title

    Detectors of γ-Quantum based on epitaxial GaAs:S, Cr layers

  • Author

    Vilisova, M.D. ; Germogenov, V.P. ; Ponomarev, I.V. ; Tyazhev, A.V.

  • Author_Institution
    Tomsk State Univ., Tomsk, Russia
  • fYear
    2011
  • fDate
    15-16 Sept. 2011
  • Firstpage
    249
  • Lastpage
    251
  • Abstract
    The results of study detector structures based on epitaxial layers of GaAs, compensated by Cr, are presented. It is shown that distribution of electric field straight in active region of the structures affected on it amplitude spectrums of γ-quantum.
  • Keywords
    chromium; gallium arsenide; gamma-ray detection; semiconductor counters; semiconductor epitaxial layers; sulphur; GaAs:S,Cr; electric field; gamma-quantum based detector; semiconductor epitaxial layers; Charge carrier processes; Detectors; Electric fields; Epitaxial growth; Gallium arsenide; Photonics; Thyristors; γ-quantum; GaAs; P-i-n-diod; detector;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control and Communications (SIBCON), 2011 International Siberian Conference on
  • Conference_Location
    Krasnoyarsk
  • Print_ISBN
    978-1-4577-1069-8
  • Type

    conf

  • DOI
    10.1109/SIBCON.2011.6072646
  • Filename
    6072646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2264044