Thermal annealing action on the capacity-voltage and siemens-voltage characteristic Ga2O3-GaAs structures

Thin films of gallium oxide have been deposited in vacuum on the GaAs substrates by thermal evaporation of powder Ga₂O₃. The capacity-voltage and siemens-voltage characteristic of Ga₂O₃-GaAs structures were investigated. It was shown that the greater the action time of high-temperature treatment in the flow of inactive gas (Ar), the lower the capacitance of the dielectric and thus lower permittivity (ε) of Ga₂O₃. This phenomenon can be explained by the change structure of Ga₂O₃ and its reconfiguration in the more conductive phase with a small quantity of the dielectric constant. The amount of surface-states density at the interface of annealed MOS structures decreases to 1·10¹² cm^-2 eV^-1.