Title :
A large signal model of GaAs MESFET
Author :
Pavlov, Alexander S. ; Plavsk, Leonid G.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
Presented in this paper is the way of getting large signal parameters of MESFET model by the use of small signal S-parameters. Small-signal S-parameters allow expressing to nonlinearity of model, which are used in account of large-signal MESFET model.
Keywords :
S-parameters; Schottky gate field effect transistors; semiconductor device models; GaAs; MESFET; large signal model; nonlinearity; s parameters; Equivalent circuits; FETs; Frequency; Gallium arsenide; HEMTs; Intrusion detection; MESFET circuits; Microwave transistors; Transconductance; Voltage;
Conference_Titel :
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
Print_ISBN :
5-7782-0491-4
DOI :
10.1109/SIBEDM.2005.195638
