• DocumentCode
    2264063
  • Title

    A large signal model of GaAs MESFET

  • Author

    Pavlov, Alexander S. ; Plavsk, Leonid G.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2005
  • fDate
    1-5 July 2005
  • Firstpage
    222
  • Lastpage
    223
  • Abstract
    Presented in this paper is the way of getting large signal parameters of MESFET model by the use of small signal S-parameters. Small-signal S-parameters allow expressing to nonlinearity of model, which are used in account of large-signal MESFET model.
  • Keywords
    S-parameters; Schottky gate field effect transistors; semiconductor device models; GaAs; MESFET; large signal model; nonlinearity; s parameters; Equivalent circuits; FETs; Frequency; Gallium arsenide; HEMTs; Intrusion detection; MESFET circuits; Microwave transistors; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
  • ISSN
    1815-3712
  • Print_ISBN
    5-7782-0491-4
  • Type

    conf

  • DOI
    10.1109/SIBEDM.2005.195638
  • Filename
    1523243
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2264063