Title :
GaAs:Cr X-ray pixel detectors
Author :
Zarubin, Andrey ; Mokeev, Dmitry ; Novikov, Vladimir ; Tolbanov, Oleg ; Tyazhev, Anton
Author_Institution :
Tomsk State Univ., Tomsk, Russia
Abstract :
Results of investigation of quantum count mode gallium arsenide pixel detectors are demonstrated. It was shown that at room temperature energy resolution of GaAs detector similar to silicon ones. But detection quantum efficiency (DQE) of 30 keV gamma-quanta of GaAs detector exceeds DQE of Si detector more then order of magnitude.
Keywords :
III-V semiconductors; X-ray detection; chromium; gallium arsenide; image sensors; DQE; GaAs:Cr; X-ray pixel detector; detection quantum efficiency; electron volt energy 30 keV; energy resolution; gamma quanta; quantum count mode gallium arsenide pixel detector; silicon detector; temperature 293 K to 298 K; Anodes; Cathodes; Detectors; Electric fields; Energy resolution; Gallium arsenide; Silicon; compensated with chromium; detection quantum efficiency; gallium arsenide; gamma-ray; pixel detector; x-ray;
Conference_Titel :
Control and Communications (SIBCON), 2011 International Siberian Conference on
Conference_Location :
Krasnoyarsk
Print_ISBN :
978-1-4577-1069-8
DOI :
10.1109/SIBCON.2011.6072649
