DocumentCode
2264185
Title
Acoustic modes in chalcogenide layer As2 S3 on rotated 128° Y-cut of lithium niobate substrate
Author
Taziev, Rinat M.
Author_Institution
Inst. of Semicond. Phys., Novosibirsk, Russia
fYear
2011
fDate
15-16 Sept. 2011
Firstpage
267
Lastpage
269
Abstract
By means of effective permittivity function for layered system the frequency dependence of excitation of various acoustic modes in a chalcogenide film As2S3 on rotated 128° Y-cut lithium niobate is investigated.
Keywords
acoustic wave propagation; acoustic wave velocity; arsenic compounds; permittivity; surface acoustic waves; thin films; As2S3; LiNbO3; acoustic modes; chalcogenide film; effective permittivity function; excitation; frequency dependence; lithium niobate substrate; Attenuation; Films; Lithium niobate; Permittivity; Substrates; Surface acoustic waves; chalcogenide; layered structure; lithium niobate; surface acoustic wave;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications (SIBCON), 2011 International Siberian Conference on
Conference_Location
Krasnoyarsk
Print_ISBN
978-1-4577-1069-8
Type
conf
DOI
10.1109/SIBCON.2011.6072652
Filename
6072652
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