• DocumentCode
    2264211
  • Title

    Properties of the Ga2O3 films obtained by anodization

  • Author

    Petrova, Y.S. ; Kalygina, V.M. ; Yaskevich, T.M.

  • Author_Institution
    Tomsk State Univ., Tomsk, Russia
  • fYear
    2011
  • fDate
    15-16 Sept. 2011
  • Firstpage
    270
  • Lastpage
    273
  • Abstract
    The effect of oxygen plasma and thermal annealing on electrical and dielectric properties of anodic films Ga2O3 wasinvestigated.
  • Keywords
    annealing; anodisation; dielectric thin films; electric breakdown; electrical conductivity; gallium compounds; plasma materials processing; semiconductor materials; semiconductor thin films; surface morphology; Ga2O3; anodic films; anodization; dielectric breakdown; dielectric properties; electrical conductivity; electrical properties; n- type semiconducting materials; oxygen plasma; surface morphology; thermal annealing; Annealing; Capacitance-voltage characteristics; Conductivity; Films; Nickel; Plasmas; Surface morphology; Anodic film Ga2O3; an oxygen plasma; gallium arsenide; thermal annealing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control and Communications (SIBCON), 2011 International Siberian Conference on
  • Conference_Location
    Krasnoyarsk
  • Print_ISBN
    978-1-4577-1069-8
  • Type

    conf

  • DOI
    10.1109/SIBCON.2011.6072653
  • Filename
    6072653
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2264211