Improvement in reading precision of micro-ID engraved on wafer

Author

Uchida, I. ; Suzuki, Nobuhiro ; Arikado, T. ; Saitoh, Youichi ; Fujimoto, Kenji ; Nakajima, Kensuke

Author_Institution

Semicond. Leading Edge Technol. Inc., Tsukuba, Japan

fYear

2003

fDate

30 Sept.-2 Oct. 2003

Firstpage

43

Lastpage

46

Abstract

A micro-ID composed of small engraved on a wafer bevel is superior to conventional marks such as SEMI-T7 in the enhanced chip gross and the reduced particle addition. In this work, micro-ID technology has been improved to enhance the reading precision. We introduce (i) an SiOC film covering the wafer bevel to prevent the dots from erosion in wafer processes, and (ii) a bevel polishing in multilevel interconnection process to cover the bevel smoothly. These two countermeasures result in 100% recognition through the CMOS process with a double level Cu interconnection.

Keywords

CMOS integrated circuits; chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit manufacture; metallic thin films; silicon compounds; CMOS process; Cu; SEMI-T7; SiOC; SiOC film; double level Cu interconnection; enhanced chip; erosion; micro-ID engraved; multilevel interconnection process; reading precision; wafer bevel; wafer processes; CMOS process; Chemical lasers; Chemical technology; Lead compounds; Lighting; Power lasers; Quality control; Semiconductor device manufacture; Semiconductor films; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2003 IEEE International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7894-6

Type

conf

DOI

10.1109/ISSM.2003.1243227

Filename

1243227