• DocumentCode
    2264531
  • Title

    Microwave transconductance amplifiers and circuits using triquint 0.5 μ MESFET devices

  • Author

    Mokari, M. Ebrahim ; Ho, Wai

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ohio Univ., Athens, OH, USA
  • fYear
    1993
  • fDate
    16-18 Aug 1993
  • Firstpage
    797
  • Abstract
    We have designed microwave transconductance amplifiers using data available for 0.5 μ MESFET devices. The amplifier is broadband from DC to 10 GHz, and transconductance coefficient gm values up to 6.2 mA/V are practically realizable. The amplifier is tested for integrator circuit, lowpass notch and bandpass filters applications
  • Keywords
    MESFET integrated circuits; MMIC amplifiers; active filters; band-pass filters; field effect MMIC; integrating circuits; low-pass filters; microwave amplifiers; microwave filters; notch filters; wideband amplifiers; 0 to 10 GHz; 0.5 micron; bandpass filter; broadband amplifier; integrator circuit; lowpass notch; microwave ICs; microwave transconductance amplifiers; transconductance coefficient gm values; triquint 0.5 μ MESFET devices; Active filters; Frequency response; MESFET circuits; Microwave amplifiers; Microwave circuits; Microwave devices; Resonant frequency; Resonator filters; Signal processing; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on
  • Conference_Location
    Detroit, MI
  • Print_ISBN
    0-7803-1760-2
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1993.343189
  • Filename
    343189