Title :
Ultrafast Raman spin rotations of electrons in quantum wells
Author :
Carter, S.G. ; Chen, Z. ; Cundiff, S.T.
Author_Institution :
JILA, Univ. of Colorado & Nat. Inst. of Stand. & Technol., Boulder, CO
Abstract :
Short pulses detuned below the absorption edge of GaAs quantum wells are used to rotate electron spins through a Raman process. Faraday rotation measurements demonstrate significant rotations with negligible excitation of electrons and holes.
Keywords :
Faraday effect; III-V semiconductors; Raman spectra; gallium arsenide; high-speed optical techniques; semiconductor quantum wells; Faraday rotation; GaAs; absorption edge; electron excitation; hole excitation; quantum wells; short pulse detuning; ultrafast Raman spin rotations; Absorption; Electron optics; Low pass filters; Optical filters; Optical polarization; Optical pulse shaping; Optical pulses; Optical pumping; Resonance; Ultrafast optics; (300.6470) Spectroscopy, semiconductors; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
