DocumentCode
2264553
Title
Continuous wave operation of quantum cascade lasers at room temperature
Author
Beck, M. ; Hofstetter, D. ; Aellen, Th. ; Faist, J. ; Gini, E.
Author_Institution
Inst. de Phys., Neuchatel Univ., Switzerland
fYear
2002
fDate
24-24 May 2002
Firstpage
180
Abstract
Summary from only given. We present buried heterostructure QC lasers with a four quantum well (QW) active region designed for emission at 9.1 /spl mu/m with an improved waveguiding scheme and better heat dissipation for high temperature CW operation. The four quantum well design makes use of short lifetime of the lower lasing state and the good injection efficiency into the upper lasing state. The laser structure is grown by molecular beam epitaxy (MBE) using ternary InGaAs and InAlAs alloys lattice matched to an n-doped InP substrate. The QC laser active material consists of 35 periods, each comprising a partially n-doped injector region and the undoped four QW active region, embedded in an optical waveguide.
Keywords
infrared sources; laser transitions; molecular beam epitaxial growth; quantum cascade lasers; substrates; waveguide lasers; 9.1 micron; InAlAs; InGaAs; InGaAs layer; InP; InP substrate; MBE; MOVPE; QC laser active material; buried heterostructure QC lasers; cladding layer; four quantum well active region; high temperature CW operation; lattice matched; metal-organic chemical vapour phase epitaxy; molecular beam epitaxy; n-doped InP substrate; optical waveguide; short lifetime; upper lasing state; waveguiding scheme; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical design; Quantum cascade lasers; Quantum well lasers; Temperature; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-706-7
Type
conf
DOI
10.1109/CLEO.2002.1033590
Filename
1033590
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