Title :
Novel, at-design-rule, via-to-metal overlay metrology for 193 nm lithography
Author :
Ueno, Atsushi ; Tsujita, Katsuyoshi ; Kurita, Hiroshi ; Iwata, Yoshiyuki ; Adel, Merabet
Author_Institution :
Process Dev. Dept., Renesas Technol. Corp., Hyogo, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
The effect of scanner aberrations on the pattern placement errors (PPE) in the copper interconnect lithography process is studied both in simulations and experimentally. New grating-based AIM overlay mark enables measuring device feature overlay. It is shown that AIM mark exhibits superior performance over conventional box-in-box (BiB) marks. Comparison between Archer AIM optical and direct CD SEM device overlay measurements was done. Both CD SEM and AIM optical measurements show sensitivity to PPE. Good matching between AIM and device overlays was demonstrated.
Keywords :
aberrations; error analysis; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit modelling; lithography; scanning electron microscopy; sensitivity; spatial variables measurement; 193 nm; Archer AIM optical device; Cu; conventional box-in-box marks; design-rule; device feature; direct CD SEM device overlay; interconnect lithography process; metal overlay metrology; pattern placement errors; scanner aberrations; Gratings; Lenses; Lighting; Lithography; Metrology; Nonlinear optics; Optical interconnections; Optical sensors; Predictive models; Robustness;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243249
