Process tunability for advance dielectric etch applications

Dual Damascene low-k dielectric technology for copper interconnects introduced to minimize RC delays, imposes new levels of exigencies over Dielectric etch process controls in terms of Etching rate uniformity and CD bias control. In this paper we introduce the unique uniformity control capabilities of a new dielectric etch reactor for advanced interconnect applications. By controlling neutral species and charged species densities, the reactor is able to adjust etching rate and CD-bias uniformity independently. Integration of Cu/Black Diamond^™ (k∼2.6) with tight distribution and good yield demonstrates the performance of the reactor.