DocumentCode :
2264924
Title :
Current and voltage ADC using a differential pair of single-electron bipolar avalanche transistors
Author :
Lany, Marc ; Popovic, Radivoje S.
Author_Institution :
Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear :
2009
fDate :
12-14 Oct. 2009
Firstpage :
127
Lastpage :
130
Abstract :
Single-electron bipolar avalanche transistors (SEBATs) enable current sensing by electron counting at room temperature. Here, differential SEBAT circuits combining the functions of amplification and analog-to-digital (A/D) conversion are proposed and characterized for two applications: Low-current A/D conversion and differential voltage A/D conversion. Charge detection efficiencies in the order of 30% are reached, allowing for the direct A/D conversion of currents in the 10-13 A range. An equivalent of the differential pair is used as a differential voltage ADC.
Keywords :
analogue-digital conversion; bipolar transistor circuits; differential amplifiers; single electron transistors; ADC; analog-to-digital conversion; differential SEBAT circuits; single electron bipolar avalanche transistors; temperature 293 K to 298 K; Avalanche breakdown; Bipolar transistors; CMOS technology; Circuits; Diodes; Electron emission; Pulse modulation; Resistors; Single electron transistors; Voltage; Analog-digital conversion; Avalanche breakdown; Bipolar transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
ISSN :
1088-9299
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2009.5314129
Filename :
5314129
Link To Document :
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