Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update

Author

Russo, Salvatore ; d´Alessandro, V. ; La Spina, L. ; Rinaldi, N. ; Nanver, L.K.

Author_Institution

Dept. of Biomedics, Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

95

Lastpage

98

Abstract

The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional HBT-oriented methods are found to be of little value.

Keywords

III-V semiconductors; bipolar transistors; gallium arsenide; heterojunction bipolar transistors; thermal resistance; BJT; DC electrical characteristics measurements; HBT; bipolar junction transistors; heterojunction bipolar transistors; self-heating thermal resistance; Biomedical measurements; Bipolar transistors; Electric resistance; Electrical resistance measurement; Gallium arsenide; Immune system; Performance evaluation; Silicon; Thermal conductivity; Thermal resistance; Bipolar junction transistors (BJTs); electrothermal effects; heterojunction bipolar transistors (HBTs); self-heating; thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314135

Filename

5314135