DocumentCode
2265086
Title
Improvement of performance deviation and productivity of MOSFETs with gate length below 30 nm by flash lamp annealing
Author
Ito, Takao ; Suguro, Kyoichi
fYear
2003
fDate
30 Sept.-2 Oct. 2003
Firstpage
175
Lastpage
178
Abstract
The impact of flash lamp annealing (FLA) technology realizing the minimum diffusion with low sheet resistivity is investigated based on MOSFET fabrication and computer simulations. It was found that the productivity can be improved, since FLA enables to employ higher acceleration energy ion implantation and higher through-put, and that MOSFET performance can be improved with its deviation being suppressed.
Keywords
MOSFET; incoherent light annealing; semiconductor device manufacture; MOSFET fabrication; acceleration energy ion implantation; diffusion; flash lamp annealing; sheet resistivity; Acceleration; Conductivity; Fabrication; Indium tin oxide; Ion implantation; Lamps; MOSFETs; Productivity; Simulated annealing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN
1523-553X
Print_ISBN
0-7803-7894-6
Type
conf
DOI
10.1109/ISSM.2003.1243258
Filename
1243258
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