Title :
Wet etching of HfO2 assisted by excimer photon irradiation
Author :
Kume, Shinichiro ; Nishimori, H. ; Sugahara, Hirofumi ; Hishinuma, N. ; Arikado, T.
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
This report describes an attempt to remove an HfO2 film by wet etching in the trial manufacture of a high-k film loaded transistor module. In dry etching, there are techniques for improving the etching rate, such as an assist of ionic species by plasmas. Wet etching, which involves immersion in a chemical solution, has limitations. This study achieved improvement in the etching rate by irradiating the film to be etched with excimer UV light so that the film is changed into a state that is readily eroded by the chemical solution.
Keywords :
dielectric materials; dielectric thin films; etching; hafnium compounds; ultraviolet radiation effects; HfO2; HfO2 film; chemical solution; dry etching; excimer UV light; excimer photon irradiation; high-k film loaded transistor module; wet etching; Chemicals; Dry etching; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Manufacturing; Plasma applications; Plasma chemistry; Plasma materials processing; Wet etching;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243259
