Title :
SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60–110GHz
Author :
Tagro, Y. ; Gloria, D. ; Boret, S. ; Lepillet, S. ; Dambrine, G.
Author_Institution :
T R&D - STD - TPS, STMicroelectronics, Crolles, France
Abstract :
In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110 GHz for BiCMOS 130 nm technologies characterization. |GammaSMAX| up to 0.75 has been achieved at the DUT input in this frequency range and NFmin of 2.6 dB has been extracted on tested device @ 77 GHz.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MIMIC; carbon; heterojunction bipolar transistors; millimetre wave bipolar transistors; noise measurement; tuning; wide band gap semiconductors; BiCMOS technologies; HBT noise parameters extraction; SiGe:C; device under test; electrical simulation; frequency 60 GHz to 110 GHz; in-situ silicon integrated tuner; integrated on-wafer; millimeter wave noise parameter extraction; multiimpedance method; noise figure 2.6 dB; noise measurement; size 130 nm; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Millimeter wave transistors; Noise measurement; Optimized production technology; Parameter extraction; Silicon germanium; Testing; Tuners; Active devices; HBT; Impedance Tuner; In-situ lab; noise measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314138
