Title :
A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance
Author :
Thrivikraman, Tushar K. ; Appaswamy, Aravind ; Phillips, Stanley D. ; Sutton, Akil K. ; Wilcox, Edward P. ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., N.W. Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We present a novel device structure using an inverse-mode, cascoded (IMC) SiGe HBT for improved tolerance of heavy ion irradiation. The cascoded SiGe device consists of a forward-mode, common-emitter SiGe HBT cascoded with a common-base inverse-mode SiGe HBT, with the subcollector region of the two devices shared. The device was fabricated in both first and third-generation, commercially-available SiGe HBT technologies. The third-generation IMC device was measured to have over 20 dB of current gain and over 30 dB of power gain at 10 GHz. In addition, the measured total dose radiation response and simulated current transients are presented. These results demonstrate the potential use of these devices in high-speed circuits intended for operation in space or other extreme environments.
Keywords :
BiCMOS integrated circuits; bipolar transistor circuits; germanium; heterojunction bipolar transistors; radiation effects; silicon compounds; BiCMOS integrated circuit; SiGe; bipolar transistor circuit; cascoded inverse-mode HBT; current transient; device structure; heavy ion irradiation; high-speed circuit; radiation effects; radiation tolerance; shared-subcollector; subcollector region; third-generation IMC device; Circuits; Current measurement; Degradation; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Radiation effects; Silicon germanium; Single event upset; Space technology; Bipolar transistor circuits; Radiation effects; Semiconductor devices; SiGe BiCMOS integrated circuits;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314139
