Title :
Electron transport in extremely scaled SiGe HBTs
Author :
Hong, S.-M. ; Jungemann, C.
Author_Institution :
Inst. for Microelectron. & Circuits, Bundeswehr Univ., Neubiberg, Germany
Abstract :
Transport and noise in nanoscale SiGe HBTs are investigated by classical TCAD tools and full solutions of the more physics-based Boltzmann equation. The more scaled the transistor is, the more quasi-ballistic is the transport and the classical TCAD models become less and less accurate.
Keywords :
Boltzmann equation; Ge-Si alloys; electron transport theory; heterojunction bipolar transistors; semiconductor device models; technology CAD (electronics); HBT; SiGe; TCAD; electron transport; heterojunction bipolar transistors; physics-based Boltzmann equation; Boltzmann equation; Computational modeling; Cutoff frequency; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Impact ionization; Silicon germanium; Stochastic resonance; Boltzmann equation; SiGe HBT; spherical harmonics expansion;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314141
