• DocumentCode
    2265266
  • Title

    A highly reliable aluminum interconnect etching process control for 0.13 μm flash technology

  • Author

    Yamamoto, Jun ; Hsieh, Ting-En ; Kondoh, T. ; Maki, Toni ; Tanimoto, Teruo ; Ogura, J. ; Muneta, T. ; Imaoka, Keiji

  • Author_Institution
    FASL Japan Ltd., Fukushima, Japan
  • fYear
    2003
  • fDate
    30 Sept.-2 Oct. 2003
  • Firstpage
    207
  • Lastpage
    210
  • Abstract
    This paper focuses on a novel Al etching profile control by resist hardening approach for DUV lithography to leave enough resist and control CD with high Al sidewall quality. Excessive resist hardening causes Al notching due to less sidewall passivation. The result shows a reasonable hardness of resist prevents Al notching and preserves enough resist with good CD control. Resist hardening (or hardness) is controlled by modifying bias power and CF4/Ar gas ratio.
  • Keywords
    aluminium; etching; hardening; hardness; integrated circuit interconnections; passivation; photoresists; titanium compounds; ultraviolet lithography; Al etching; Al notching; CF4/Ar gas ratio; DUV lithography; TiN-Al; bias power; flash technology; hardness; reliable aluminum interconnect; resist hardening; sidewall passivation; Aluminum; Artificial intelligence; Etching; Lithography; Passivation; Plasma applications; Process control; Resists; Space technology; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2003 IEEE International Symposium on
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-7894-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2003.1243266
  • Filename
    1243266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2265266