Title :
Influence of process chamber ambient on SiOC (k=2.9) ILD Cu damascene ashing
Author :
Maruyama, Tetsuhiro ; Nishizawa, A. ; Tokashiki, K. ; Okamoto, Shusuke ; Igarashi, Yoichiro ; Honda, Masakazu
Author_Institution :
Adv. Technol. Dev. Div., NEC Electron. Corp., Kanagawa, Japan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
Influence of dry etch/ash chamber ambient on inorganic low-k (SiOC k=2.9) Cu damascene interconnect is studied. To minimize erosion and damage of the SiOC ILD and the SiCN cap-layer, it is very important to characterize F atom density in process chamber.
Keywords :
copper; dielectric materials; integrated circuit interconnections; silicon compounds; sputter etching; Cu; F atom density; SiOC; SiOC ILD Cu damascene ashing; dry etch/ash chamber; erosion; inorganic low-k Cu damascene interconnect; Ash; Capacitance; Degradation; Dry etching; Optical films; Plasma applications; Plasma chemistry; Plasma measurements; Pollution measurement; Wire;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243267
