Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures

The forward J-V characteristics of 4H-SiC p-i-n diodes are investigated in a wide range of currents and temperatures by means of an analytical model which describes in detail the role of the various physical parameters, such as bandgap narrowing effect, incomplete doping activation and doping-dependent mobility. In order to analyze the influence of the SiC properties at different injection regimes, the total diode current is expressed in terms of the minority current contributions in the various device regions. The accuracy of the model is verified by comparisons with numerical simulations and experimental data reported in the literature. The analysis shows that the proposed model can turn useful for a better understanding of the device behavior and for implementation in circuit simulators.