Title :
SGMOS: a student-oriented program for the microcomputer simulation of submicron-geometry MOSFETs
Author_Institution :
Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
Abstract :
In order to enable students to simulate submicron-geometry MOSFETs, we have developed a student-oriented and microcomputer-efficient program called SGMOS which can be used to study the short channel, the narrow width, the inverse narrow width and the velocity saturation effects arising from the miniaturization of the MOSFETs
Keywords :
MOSFET; computer aided instruction; digital simulation; electronic engineering education; microcomputer applications; semiconductor device models; SGMOS; inverse narrow width; microcomputer simulation; narrow width; short channel; student-oriented program; submicron-geometry MOSFETs; velocity saturation effects; FETs; Geometry; Laboratories; MOSFETs; Microcomputers; Microelectronics; Predictive models; Solid modeling; Threshold voltage; Workstations;
Conference_Titel :
Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on
Conference_Location :
Detroit, MI
Print_ISBN :
0-7803-1760-2
DOI :
10.1109/MWSCAS.1993.343237
