Title :
60 GHz wide-band power amplifier
Author :
Hamidian, Amin ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
Abstract :
This paper presents a fully integrated 60 GHz single stage power amplifier with cascode topology. The PA is designed on 0.25 mum SiGe:C BiCMOS technology. The technology provides ft and fmax ap 200 GHz. The PA has achieved the 1 dB gain bandwidth of more than 9 GHz from 57 GHz to 66 GHz and 3 dB gain bandwidth of more than 18 GHz (30 %) from 51 GHz to 69 GHz. The PA has been designed to have the wideband large and small signal gain in the whole range. This has resulted to 1 dB gain compression point more than 11.5 dBm and power added efficiency better than 9 % from 57 GHz to 65 GHz. The PA achieves the maximum P1dB of 13.5 dBm at around 58 GHz. The constant gain, high linearity and good PAE for the whole range (57 to 66 GHz) has made this power amplifier quite interesting for 60 GHz applications.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; microwave amplifiers; microwave integrated circuits; power amplifiers; wideband amplifiers; BiCMOS technology; HBT; SiGe; frequency 200 GHz; frequency 51 GHz to 69 GHz; frequency 57 GHz to 66 GHz; frequency 60 GHz; gain 1 dB; gain 3 dB; heterojunction bipolar transistors; power amplifier; size 0.25 mum; wide-band amplifier; wireless communication; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Gain; High power amplifiers; Linearity; Power amplifiers; Signal design; Topology; Wideband; 60 GHz; PA; SiGe-HBT technology; wireless communications;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314150
