A low power 1.8–2.6 dB noise figure, SiGe HBT wideband LNA for multiband wireless applications

Author

Howard, Duane C. ; Li, Xiangtao ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

55

Lastpage

58

Abstract

We present a wideband, very low power, Low Noise Amplifier (LNA) implemented in Silicon-Germanium heterojunction bipolar transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 5-11 GHz, and achieves a peak gain of 19.2 dB and 66% fractional bandwidth. The LNA exhibits a Noise Figure (NF) of 1.8-2.6 dB across band and consumes only 9 mW of power. To the authors´ knowledge, this is the lowest NF for a wideband LNA reported in a commercially-available silicon-based process, and was realized by utilizing inductive peaking, device layout optimization, and shunt capacitive feedback.

Keywords

Ge-Si alloys; bandwidth allocation; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; radiocommunication; HBT wideband LNA; SiGe; device layout optimization; fractional bandwidth; frequency 5 GHz to 11 GHz; heterojunction bipolar transistor; inductive peaking; low noise amplifier; multiband wireless application; noise figure; power 9 mW; shunt capacitive feedback; 1f noise; Broadband amplifiers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Wideband; BiCMOS; LNA; SiGe; low noise amplifier; noise figure; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314152

Filename

5314152