A SiGe:C BiCMOS LNA for 60GHz band applications

Author

Severino, R.R. ; Taris, T. ; Deval, Y. ; Belot, D. ; Begueret, J.B.

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

51

Lastpage

54

Abstract

A new differential LNA dedicated to 60 GHz band has been implemented in a 130 nm BiCMOS technology intended for millimeter-waves (mm-Waves) applications. Focusing on the circuit implementation which is a critical design step in mm-Waves range, this work proposes a systematic modeling of layout parasitic elements leading to almost perfectly fit measurement and simulation results. The two stage cascode LNA achieves a 21.14 dB maximum peak of power gain at 61.5 GHz. Measured 1 dB compression point is -21.2 dBm, whereas the minimum simulated noise figure is 4.3 dB at 60 GHz. Power consumption is 10.2 mW for the circuit core. This building block is also presented as a specific example of a complete design flow for mm-Waves applications.

Keywords

BiCMOS integrated circuits; low noise amplifiers; 60 GHz band application; BiCMOS technology; SiGe:C BiCMOS LNA; bandwidth 60 GHz; layout parasitic elements; millimeter-waves application; BiCMOS integrated circuits; Circuit simulation; Current density; Energy consumption; Frequency; Integrated circuit interconnections; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Power transmission lines; 60GHz; BiCMOS9MW; Bipolar/BiCMOS integrated circuit; load pull; low noise amplifier (LNA); millimeter-waves (mm-Waves);

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314155

Filename

5314155