Title :
Femtosecond micromachining of InP: analysis of ablation rates, morphology and residual strain
Author :
Borowiec, A. ; Haugen, H.K.
Author_Institution :
Inst. for Mater. Res., McMaster Univ., Hamilton, Ont., Canada
Abstract :
Summary form only given. We presented detailed results of micromachining of InP with 120 fs, 800 nm pulses, with an emphasis on measuring the ablation rates, groove geometries and residual strain with various machining parameters such as pulse energy, cutting speed and number of consecutive passes. The geometry and morphology of the cuts were analyzed by scanning electron microscopy (SEM) and strain measurements were performed with a degree of polarization technique (DOP).
Keywords :
III-V semiconductors; indium compounds; laser ablation; laser beam machining; micromachining; scanning electron microscopy; surface morphology; 120 fs; 800 nm; InP; ablation rates; cutting speed; degree of polarization technique; femtosecond micromachining; groove geometries; machining parameters; morphology; number of consecutive passes; pulse energy; residual strain; scanning electron microscopy; strain measurements; Capacitive sensors; Energy measurement; Geometry; Indium phosphide; Micromachining; Morphology; Pulse measurements; Scanning electron microscopy; Strain measurement; Velocity measurement;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1033643
