Title :
Advanced process modules and architectures for half-terahertz SiGe:C HBTs
Author :
Decoutere, S. ; Van Huylenbroeck, S. ; Heinemann, B. ; Fox, A. ; Chevalier, P. ; Chantre, A. ; Meister, T.F. ; Aufinger, K. ; Schröter, M.
Author_Institution :
IMEC vzw, Leuven, Belgium
Abstract :
The European project DOTFIVE addresses evolutionary scaling of self-aligned selective epitaxial base SiGe:C HBTs, investigates novel SiGe:C HBT architectures, and develops novel process modules to push SiGe BiCMOS towards 500 GHz Fmax and 2.5 ps gate delay. In this paper, scaling issues of SiGe:C HBT technology will be addressed. The limitations of the different commonly used architectures will be described, and measures taken in the project to overcome these limitations will be summarized. Initial results indicate that the objectives of the project can be reached.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; millimetre wave devices; scaling circuits; semiconductor materials; DOTFIVE addresses; European project; HBT; SiGe:C; advanced process modules; evolutionary scaling; frequency 500 GHz; gate delay; half-terahertz; self-aligned selective epitaxial; time 2.5 ps; BiCMOS integrated circuits; Bipolar transistors; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave technology; Production; Radar applications; Semiconductor process modeling; Silicon germanium; BiCMOS process technology; Microwave technology; Millimeter-wave technology; Silicon-Germanium bipolar transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314214
