Real Exposed temperature evaluation using reordering of implanted amorphous Si layers

In this paper, we present an indirect method to evaluate the Really Exposed temperature and uniformity within a wafer during an thermal process between 450°C to 580 °C using reordering of implanted Amorphous Si Layers (REAL method). We show two different examples of low temperature processing where REAL was used to measure the actual wafer temperature: Co Silicidation and plasma CVD. The silicidation example shows how REAL can be used to accurately and practically monitor RTP equipment and processes. For plasma CVD, we demonstrate, for the first time, the actual wafer temperature during processing. Through this study, it can be said that the new temperature monitoring method has been established.