Title :
Product-wafer focus-exposure monitor for advanced flash memory
Author :
Hannon, S. ; Monahan, K. ; Eichelberger, B. ; Nelson, Craig
Author_Institution :
FASL LLC, Austin, TX, USA
fDate :
30 Sept.-2 Oct. 2003
Abstract :
Focus-exposure control in lithography is a key challenge for CD control at the 130nm technology node and below. Focus error alone can account for more than 50% of the critical dimension variation seen in new processes and devices. Unseen focus and exposure excursions degrade first-pass yield, cause unnecessary rework, and reduce scanner productivity. For low-runner flash memory in early production, focus-related yield losses can be several percent. At FASL LLC´s Fab 25, we have determined that the most serious deficiency in focus-exposure control is a monitor that can work directly on product wafers.
Keywords :
flash memories; integrated circuit manufacture; integrated memory circuits; lithography; process monitoring; 130 nm; CD control; flash memory; focus error; focus-exposure control; focus-related yield losses; lithography; product-wafer focus-exposure monitor; Error correction; Etching; Flash memory; Investments; Lithography; Manufacturing processes; Metrology; Monitoring; Process control; Production;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243300