Title :
Leakage current and defect monitors for ultra-shallow co-silicide junctions in advanced 0.13μm CMOS
Author :
Chi, Mike ; Shen, C.H. ; Lin, H.J. ; Chen, Choon Chowe ; Lin, Y.F. ; Lee, Chris S. ; Chang, K.H.
Author_Institution :
Taiwan Semicond. Manuf. Corp., Hsin Chu, Taiwan
fDate :
30 Sept.-2 Oct. 2003
Abstract :
In this paper, a set of CoSi shallow junction test structures for effective process characterization and manufacturing monitors is reported with practical examples in advanced 0.13μm CMOS technology. The defect and leakage current mechanisms of ultra shallow n+/p junction are resulted from many process details, e.g. STI stress related effect, n-type poly gate pre-doping effect, source/drain extension (LDD) and pocket implant effect, gate-induced-drain-leakage (GIDL) effect, CoSi pre-clean (with Ar sputtering), abnormal source and drain dopant diffusion near STI edge, thicker CoSi formation near the edges of STI and spacer, etc.
Keywords :
CMOS integrated circuits; cobalt alloys; diffusion; diodes; integrated circuit manufacture; integrated circuit metallisation; leakage currents; process monitoring; silicon alloys; sputtering; voids (solid); 0.13 micron; Ar sputtering; CMOS technology; CoSi; CoSi shallow junction test structures; defect monitors; drain dopant diffusion; gate-induced-drain-leakage; leakage current mechanisms; n-type poly gate pre-doping effect; pocket implant effect; source/drain extension; stress related effect; ultra-shallow cosilicide junctions; Argon; CMOS process; CMOS technology; Implants; Leakage current; Manufacturing processes; Pulp manufacturing; Sputtering; Stress; Testing;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243304
