Leakage current and defect monitors for ultra-shallow co-silicide junctions in advanced 0.13μm CMOS

Author

Chi, Mike ; Shen, C.H. ; Lin, H.J. ; Chen, Choon Chowe ; Lin, Y.F. ; Lee, Chris S. ; Chang, K.H.

Author_Institution

Taiwan Semicond. Manuf. Corp., Hsin Chu, Taiwan

fYear

2003

fDate

30 Sept.-2 Oct. 2003

Firstpage

366

Lastpage

369

Abstract

In this paper, a set of CoSi shallow junction test structures for effective process characterization and manufacturing monitors is reported with practical examples in advanced 0.13μm CMOS technology. The defect and leakage current mechanisms of ultra shallow n+/p junction are resulted from many process details, e.g. STI stress related effect, n-type poly gate pre-doping effect, source/drain extension (LDD) and pocket implant effect, gate-induced-drain-leakage (GIDL) effect, CoSi pre-clean (with Ar sputtering), abnormal source and drain dopant diffusion near STI edge, thicker CoSi formation near the edges of STI and spacer, etc.

Keywords

CMOS integrated circuits; cobalt alloys; diffusion; diodes; integrated circuit manufacture; integrated circuit metallisation; leakage currents; process monitoring; silicon alloys; sputtering; voids (solid); 0.13 micron; Ar sputtering; CMOS technology; CoSi; CoSi shallow junction test structures; defect monitors; drain dopant diffusion; gate-induced-drain-leakage; leakage current mechanisms; n-type poly gate pre-doping effect; pocket implant effect; source/drain extension; stress related effect; ultra-shallow cosilicide junctions; Argon; CMOS process; CMOS technology; Implants; Leakage current; Manufacturing processes; Pulp manufacturing; Sputtering; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2003 IEEE International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7894-6

Type

conf

DOI

10.1109/ISSM.2003.1243304

Filename

1243304