Three dimensional modeling of anomalous diffusion of boron through patterned silicon

It has been conclusively shown earlier that in the case of impurity diffusion of boron into patterned silicon, the presence of masking oxide interferes with the diffusion process and modifies the diffusion kinetics. These effects have been explained on the basis of a model based upon surface diffusion of boron over silicon and silicon dioxide. A quantitative model has been suggested and shown to account for these effects. A software has been developed which may be integrated with any of the available process simulators.