DocumentCode :
2266466
Title :
A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Author :
Van Huylenbroeck, S. ; Sibaja-Hernandez, A. ; Venegas, R. ; You, S. ; Winderickx, G. ; Radisic, D. ; Lee, W. ; Ong, P. ; Vandeweyer, T. ; Nguyen, N.D. ; De Meyer, K. ; Decoutere, S.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2009
fDate :
12-14 Oct. 2009
Firstpage :
5
Lastpage :
8
Abstract :
An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; submillimetre wave devices; HBT device; SiGe:C; frequency 400 GHz; fully self aligned HBT architecture; single step epitaxial collector base process; Bipolar transistors; Crystallization; Diffusion tensor imaging; Dry etching; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave technology; Planarization; Protection; Silicon; Silicon bipolar process technology; hetero-junction bipolar transistor (HBT); millimeter-wave bipolar transistor; silicon-germanium (SiGe);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
ISSN :
1088-9299
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2009.5314244
Filename :
5314244
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2266466
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