• DocumentCode
    2266466
  • Title

    A 400GHz fMAX fully self-aligned SiGe:C HBT architecture

  • Author

    Van Huylenbroeck, S. ; Sibaja-Hernandez, A. ; Venegas, R. ; You, S. ; Winderickx, G. ; Radisic, D. ; Lee, W. ; Ong, P. ; Vandeweyer, T. ; Nguyen, N.D. ; De Meyer, K. ; Decoutere, S.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2009
  • fDate
    12-14 Oct. 2009
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; submillimetre wave devices; HBT device; SiGe:C; frequency 400 GHz; fully self aligned HBT architecture; single step epitaxial collector base process; Bipolar transistors; Crystallization; Diffusion tensor imaging; Dry etching; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave technology; Planarization; Protection; Silicon; Silicon bipolar process technology; hetero-junction bipolar transistor (HBT); millimeter-wave bipolar transistor; silicon-germanium (SiGe);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
  • Conference_Location
    Capri
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-4894-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2009.5314244
  • Filename
    5314244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2266466