A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters

Author

Laskin, E. ; Chevalier, P. ; Sautreuil, B. ; Voinigescu, S.P.

Author_Institution

Edward S. Rogers Sr. Dept. of ECE, Univ. of Toronto, Toronto, ON, Canada

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

178

Lastpage

181

Abstract

This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm², and consumes 1.5 W.

Keywords

Ge-Si alloys; amplitude modulation; elemental semiconductors; frequency modulation; low noise amplifiers; millimetre wave amplifiers; millimetre wave circuits; silicon; transceivers; voltage-controlled oscillators; BiCMOS technology; Doppler detection and data transmission; LNA; SiGe; amplitude modulation; bit rate 4 Gbit/s; double-sideband transceiver; frequency 140 GHz; frequency modulation; gain 30 dB; noise figure 12.3 dB; power 1.5 W; push-push VCO; single-chip silicon transceiver; size 130 nm; static divide-by-64 chain; variable gain IF amplifier; Amplitude modulation; Data communication; Frequency conversion; Frequency modulation; Gain; Germanium silicon alloys; Noise figure; Silicon germanium; Transceivers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE

Conference_Location

Capri

ISSN

1088-9299

Print_ISBN

978-1-4244-4894-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2009.5314245

Filename

5314245