DocumentCode :
2266505
Title :
FOUP mini-environment contamination control optimizing nitrogen purging
Author :
Tokunaga, Kyoya ; Koiwa, A. ; Suzuki, Nobuhiro ; Takeda, Kenji ; Makabe, K. ; Nishihara, S. ; Koike, Atsushi
Author_Institution :
Trecenti Technol. Inc., Hitachinaka, Japan
fYear :
2003
fDate :
30 Sept.-2 Oct. 2003
Firstpage :
463
Lastpage :
466
Abstract :
We have evaluated FOUP nitrogen purging performance and effect on Semiconductor device characteristics. Due to small inner volume, small amount of nitrogen gas flow is effective to reduce oxygen and humidity inside FOUP. Sealing structure like check valve is important to keep environment inside. Nitrogen purging is found effective to improve Cu interconnect reliability etc. From purging time and particle point of view, we believe purging at equipment loadport should be done through FOUP door/shell opening instead of breathing filter at FOUP bottom. System configuration compatible with current SEMI standard is proposed.
Keywords :
contamination; copper; electric breakdown; integrated circuit interconnections; integrated circuit manufacture; integrated circuit reliability; nitrogen; phosphorus; process control; silicon; Cu; Cu interconnect reliability; N; P:Si; front opening unified pod; humidity; minienvironment contamination; nitrogen gas flow; nitrogen purging; oxygen; sealing structure; semiconductor device properties; Contamination; Filters; Humidity; Nitrogen; Performance analysis; Sealing materials; Seals; Semiconductor device manufacture; Semiconductor devices; Valves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN :
1523-553X
Print_ISBN :
0-7803-7894-6
Type :
conf
DOI :
10.1109/ISSM.2003.1243327
Filename :
1243327
Link To Document :
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