DocumentCode :
2266541
Title :
Adsorption of residual trace impurities in UPW onto wafer surface
Author :
Kogure, M. ; Yonehara ; Sakurai, Takayasu ; Ohmi, Tadahiro
Author_Institution :
Nomura Micro Sci. Co. Ltd., Kanagawa-ken, Japan
fYear :
2003
fDate :
30 Sept.-2 Oct. 2003
Firstpage :
471
Lastpage :
474
Abstract :
The state-of-the-art UPW (Ultra Pure Water) production technology has reduced almost all impurities in UPW below their determination limit. Trace metals still remaining in UPW, however, are considered to adversely affect yield of semiconductor device that has been hitting the theoretical limit. Integral adsorption method is a means to accurately measure trace impurities in UPW by concentrating and getting them adsorbed onto Si substrate. By using this method, authors precisely studied behavior of residual trace impurities in UPW and have revealed that they are highly likely to form impurity complexes by coagulating with colloidal matters or organic impurities.
Keywords :
adsorption; copper; impurities; iron; nickel; surface contamination; water; Si; Si substrate; UPW; adsorption; coagulation; colloidal matter; organic impurity; residual trace impurity; semiconductor device; ultrapure water; wafer surface; Biomembranes; Chemical technology; Cleaning; Contamination; Copper; Iron; Production; Semiconductor impurities; Substrates; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN :
1523-553X
Print_ISBN :
0-7803-7894-6
Type :
conf
DOI :
10.1109/ISSM.2003.1243329
Filename :
1243329
Link To Document :
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