Title :
SiGe HBT NPN device optimization for RF power amplifier applications
Author :
Joseph, A. ; McPartlin, M. ; Lafontaine, H. ; Forsyth, J. ; Candra, P. ; Previti-Kelly, R. ; Doherty, M.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
This paper describes the optimization of Silicon Germanium (SiGe) NPN bipolar transistors for power amplifier performance. Minimizing the collector resistance and barrier effects in a power device are important to optimize the RF characteristics. Overall, we demonstrate that by optimizing the Ge retrograde design, one can improve the large signal performance to provide 66.5% Power-Added-Efficiency (PAE) at an output power of 15.4 dBm, with 14.1 dB of peak Gain (Gp) and 14.1 dBm P1dB, without degrading BVceo.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power amplifiers; HBT NPN device optimization; RF power amplifier applications; SiGe; bipolar transistors; Bipolar transistors; Design optimization; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Signal design; Silicon germanium; Power amplifier; SiGe NPN;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314249
