Compatibility of a cryogenic aerosol process on SiLK and porous MSQ

Author

Clark, Patrick G. ; Butterbaugh, J.W. ; Thomes, G.P. ; Weygand, J.F. ; Wagener, T.J. ; Becker, D.S.

Author_Institution

FSI Int. Inc., Chaska, MN, USA

fYear

2003

fDate

30 Sept.-2 Oct. 2003

Firstpage

479

Lastpage

482

Abstract

Cryogenic aerosol offers an inert and effective approach to particle removal. In this study, we characterize a nitrogen aerosol process on SiLK^® and porous MSQ. The aerosol process was optimized using silicon nitride particle challenge wafers and shown to be >99% efficient for all bin sizes at 0.09 μm and larger. FTIR and ellipsometry measurements on blanket low k films indicate that the nitrogen aerosol has no adverse effect on the low k properties. Dow SiLK^® Clean 1 test structures were processed and then characterized by SEM. No significant damage or delamination was observed on the low k patterned films.

Keywords

Fourier transform spectra; aerosols; cryogenics; delamination; ellipsometry; infrared spectra; integrated circuit manufacture; nitrogen; scanning electron microscopy; surface cleaning; 0.09 micron; FTIR spectra; N; SEM; blanket low k film; cryogenic aerosols; delamination; ellipsometry; nitrogen aerosols; porous methylsislesquioxane; silicon nitride particle; Aerosols; Argon; Cleaning; Cryogenics; Delamination; Ellipsometry; Manufacturing; Nitrogen; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2003 IEEE International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7894-6

Type

conf

DOI

10.1109/ISSM.2003.1243331

Filename

1243331