DocumentCode :
2266570
Title :
Compatibility of a cryogenic aerosol process on SiLK and porous MSQ
Author :
Clark, Patrick G. ; Butterbaugh, J.W. ; Thomes, G.P. ; Weygand, J.F. ; Wagener, T.J. ; Becker, D.S.
Author_Institution :
FSI Int. Inc., Chaska, MN, USA
fYear :
2003
fDate :
30 Sept.-2 Oct. 2003
Firstpage :
479
Lastpage :
482
Abstract :
Cryogenic aerosol offers an inert and effective approach to particle removal. In this study, we characterize a nitrogen aerosol process on SiLK® and porous MSQ. The aerosol process was optimized using silicon nitride particle challenge wafers and shown to be >99% efficient for all bin sizes at 0.09 μm and larger. FTIR and ellipsometry measurements on blanket low k films indicate that the nitrogen aerosol has no adverse effect on the low k properties. Dow SiLK® Clean 1 test structures were processed and then characterized by SEM. No significant damage or delamination was observed on the low k patterned films.
Keywords :
Fourier transform spectra; aerosols; cryogenics; delamination; ellipsometry; infrared spectra; integrated circuit manufacture; nitrogen; scanning electron microscopy; surface cleaning; 0.09 micron; FTIR spectra; N; SEM; blanket low k film; cryogenic aerosols; delamination; ellipsometry; nitrogen aerosols; porous methylsislesquioxane; silicon nitride particle; Aerosols; Argon; Cleaning; Cryogenics; Delamination; Ellipsometry; Manufacturing; Nitrogen; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
ISSN :
1523-553X
Print_ISBN :
0-7803-7894-6
Type :
conf
DOI :
10.1109/ISSM.2003.1243331
Filename :
1243331
Link To Document :
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