DocumentCode :
2266591
Title :
A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX
Author :
Chevalier, P. ; Pourchon, F. ; Lacave, T. ; Avenier, G. ; Campidelli, Y. ; Depoyan, L. ; Troillard, G. ; Buczko, M. ; Gloria, D. ; Céli, D. ; Gaquière, C. ; Chantre, A.
Author_Institution :
STMicroelectronics, Crolles, France
fYear :
2009
fDate :
12-14 Oct. 2009
Firstpage :
1
Lastpage :
4
Abstract :
This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz fMAX. The technological optimization strategy is discussed and electrical characteristics are presented. A record peak fMAX of 423 GHz (fT = 273 GHz) is demonstrated in SiGe:C HBT technology.
Keywords :
Ge-Si alloys; carbon; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; Si-SiGe:C; double-polysilicon FSA-SEG Si/SiGe:C HBT; electrical characteristics; frequency 400 GHz; technological optimization; BiCMOS integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; BiCMOS; Heterojunction bipolar transistors; Millimeter wave transistors & measurements; Nanotechnology; Silicon Germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
ISSN :
1088-9299
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2009.5314250
Filename :
5314250
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2266591
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