Title :
Novel method for PSG-to-PSG interface integrity improving
Author :
Yuli, C. ; Semeon, A. ; Vladislav, A. ; Andy, S.
Author_Institution :
Intel Electron. Ltd., Kiryat Gat, Israel
fDate :
30 Sept.-2 Oct. 2003
Abstract :
Low temperature deposition of PSG (Phosphosilicate glass) by PECVD is a widely used method to create inter-layer insulators. Device shrink drives the use of a multi-step gap filling process: deposition/etch/deposition, enabling a void-less filling of narrow gaps. However, this type of filling creates an interface between the deposited PSG1 and PSG2 layers. This paper will detail a novel method, which substantially improves PSG-to-PSG adhesion and eliminates the sub-layers separation. The method is based on PSG1 surface plasma pretreatment prior to the PSG2 deposition. The mechanism preventing PSG1-to-PSG2 separation, improves inter-layers integrity and device reliability is suggested and discussed in details.
Keywords :
adhesion; integrated circuit technology; phosphosilicate glasses; plasma CVD; plasma materials processing; reliability; PECVD; PSG-PSG interface integrity; adhesion; device reliability; device shrink drives; inter-layer insulators; low temperature deposition; plasma pretreatment; sublayers separation; Chemical vapor deposition; Filling; Helium; Insulation; Plasma applications; Plasma chemistry; Plasma devices; Plasma properties; Plasma temperature; Sputter etching;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243333
