Title :
A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps
Author :
Rücker, H. ; Heinemann, B. ; Winkler, W. ; Barth, R. ; Borngräber, J. ; Drews, J. ; Fischer, G.G. ; Fox, A. ; Grabolla, T. ; Haak, U. ; Knoll, D. ; Korndörfer, F. ; Mai, A. ; Marschmeyer, S. ; Schley, P. ; Schmidt, D. ; Schmidt, J. ; Schulz, K. ; Tillack,
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
A 0.13 mum SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (fT=240 GHz, fmax=330 GHz, BVCEO=1.7 V) along with high-voltage HBTs (fT=50 GHz, fmax=130 GHz, BVCEO=3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; BiCMOS technology; LC oscillators; SiGe; frequency 122 GHz; frequency 130 GHz; frequency 240 GHz; frequency 330 GHz; frequency 50 GHz; high-speed HBT; low-noise amplifiers; millimeter wave application; ring oscillator gate delays; size 0.13 mum; time 2.9 ps; triple-well RF-CMOS process; voltage 1.7 V; BiCMOS integrated circuits; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Millimeter wave radar; Millimeter wave technology; Noise figure; Ring oscillators; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave bipolar integrated circuits; Millimeter wave devices; Silicon alloys; Silicon bipolar/BiCMOS process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314251
