Title :
Functional impact of particulate contamination from ion implantation on individual transistors
Author :
Vanderpool, A. ; Whitson, B.
Author_Institution :
Intel, Chandler, AZ, USA
fDate :
30 Sept.-2 Oct. 2003
Abstract :
ULSI device construction is highly sensitive to particulate contamination. High current ion implantation is a significant source of particles, yet the kill rate of these particles is not well understood. This paper has found that particles 1μ or larger at implant kill die by blocking the implant with a 7% kill rate for particles added during ion implantation compared to a 15% kill rate for incoming particles. This suggests that the yield focus in implant should concentrate on particles larger than 1μ.
Keywords :
MOSFET; ULSI; ion implantation; 1 micron; ULSI device; ion implantation; particulate contamination; transistors; Contamination; Implants; Ion implantation; Modems; Noise level; Particle measurements; Pollution measurement; Semiconductor device modeling; Testing; Ultra large scale integration;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243337
