Title :
High speed low power phase accumulators for DDS applications in SiGe bipolar technology
Author :
Laemmle, Benjamin ; Wagner, Christoph ; Knapp, Herbert ; Maurer, Linus ; Weigel, Robert
Author_Institution :
Inst. of Electron. Eng., Univ. Erlangen-Nuremberg, Erlangen, Germany
Abstract :
Two phase accumulators with 10 and 8 bit resolution, 7 and 15 GHz maximum clock rate, and a power consumption of 237 and 302.5 mW for use in direct digital synthesizers are presented. The accumulators are designed to retain phase coherency when a frequency switch is performed and are integrated into a DDS to perform simple measurement. The architecture is described, the circuits analyzed and measurements given. The chips are fabricated in a 0.35 mum 200-GHz fT SiGe bipolar technology and occupy only 1028 times 1128 mum2.
Keywords :
bipolar transistors; DDS application; SiGe bipolar technology; direct digital synthesizers; frequency 15 GHz; frequency 7 GHz; frequency switch; high speed low power phase accumulator; phase coherency; power 237 mW; power 302.5 mW; two phase accumulator; Clocks; Energy consumption; Frequency; Germanium silicon alloys; Integrated circuit measurements; Performance evaluation; Semiconductor device measurement; Silicon germanium; Switches; Synthesizers; SiGe; direct digital synthesizer; frequency synthesizer; heterojunction bipolar transistor; phase accumulator;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2009.5314253
