DocumentCode :
2266673
Title :
Saturation of second harmonic generation in plasmon-coupled GaAs-filled hole arrays
Author :
Zhang, Jingyu ; Brueck, S.R.J.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
Second harmonic generation (SH) based on the enhancement of localized fields confined in nanoscale periodic, GaAs-filled holes in a metal film is presented. The SH saturates for a fundamental peak power intensity Gt 20 GW/cm2.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; localised modes; optical harmonic generation; plasmons; GaAs; localized fields; metal film; nanoscale periodic; plasmon-coupled hole arrays; second harmonic generation; Frequency conversion; Gallium arsenide; Gold; Inorganic materials; Nonlinear optics; Optical films; Optical frequency conversion; Optical harmonic generation; Optical waveguides; Plasmons; (050.1220) Apertures; (050.2770) Gratings; (190.2620) Harmonic generation and mixing;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4572820
Link To Document :
بازگشت