Title :
Table of contents
Abstract :
The following topics are dealt with: SiGe HBT; software defined radio; RF building blocks; device physics; state-of-the-art measurement; parameter extraction; advanced modeling; signal processing; SiGe BiCMOS platform; and SiC power devices.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; power electronics; signal processing; RF building blocks; SiC power devices; SiGe; SiGe BiCMOS platform; SiGe HBT; advanced modeling; bipolar circuit; device physics; parameter extraction; signal processing; software defined radio; state-of-the-art measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2009. BCTM 2009. IEEE
Conference_Location :
Capri
Print_ISBN :
978-1-4244-4894-4
DOI :
10.1109/BIPOL.2009.5314254
