MOCVD grown GaInNAs lasers

Summary form only given. We demonstrated the first electrically pumped CW operation of a 1.26 /spl mu/m MOCVD grown GaInNAs VCSEL. Thus far this is the only report of an electrically pumped GalnNAs VCSEL grown by MOCVD, which is suitable for mass production. The threshold current and voltage of a 10 /spl times/ 10 /spl mu/m/sup 2/ aperture device under CW operation were 7.6 mA and 2.8 V, respectively. Highly strained GaInAs QWs were grown by MOCVD. We report the well number dependence of the photoluminescence (PL) and laser characteristics of highly strained GaIn(N)As MQWs. We also discuss the possibility of applying them to 1.3 /spl mu/m GaInNAs VCSELs. The PL intensity versus the PL peak wavelength of the GaInAs QWs is shown. The high luminescence intensities were obtained up to 1.20 /spl mu/m, 1.18 /spl mu/m and 1.17 /spl mu/m in the SQW, DQW and TQW, respectively.