DocumentCode :
2266787
Title :
MOCVD grown GaInNAs lasers
Author :
Sato, Seiki ; Takahashi, Tatsuro ; Jikutani, N. ; Itoh, A. ; Kaminishi, M.
Author_Institution :
Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan
fYear :
2002
fDate :
24-24 May 2002
Firstpage :
266
Abstract :
Summary form only given. We demonstrated the first electrically pumped CW operation of a 1.26 /spl mu/m MOCVD grown GaInNAs VCSEL. Thus far this is the only report of an electrically pumped GalnNAs VCSEL grown by MOCVD, which is suitable for mass production. The threshold current and voltage of a 10 /spl times/ 10 /spl mu/m/sup 2/ aperture device under CW operation were 7.6 mA and 2.8 V, respectively. Highly strained GaInAs QWs were grown by MOCVD. We report the well number dependence of the photoluminescence (PL) and laser characteristics of highly strained GaIn(N)As MQWs. We also discuss the possibility of applying them to 1.3 /spl mu/m GaInNAs VCSELs. The PL intensity versus the PL peak wavelength of the GaInAs QWs is shown. The high luminescence intensities were obtained up to 1.20 /spl mu/m, 1.18 /spl mu/m and 1.17 /spl mu/m in the SQW, DQW and TQW, respectively.
Keywords :
III-V semiconductors; MOCVD; current density; gallium compounds; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; surface emitting lasers; 1.17 micron; 1.18 micron; 1.20 micron; 1.26 micron; 1.3 micron; 10 micron; 2.8 V; 7.6 mA; DQW; GaInNAs; MOCVD grown GaInNAs lasers; PL intensity; PL peak wavelength; SQW; TQW; VCSEL; electrically pumped CW operation; high luminescence intensities; highly strained GaIn(N)As MQW; highly strained GaInAs QW; laser characteristics; mass production; photoluminescence; threshold current; voltage; well number dependence; Apertures; Luminescence; MOCVD; Mass production; Photoluminescence; Pump lasers; Quantum well devices; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
Type :
conf
DOI :
10.1109/CLEO.2002.1033930
Filename :
1033930
Link To Document :
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